Semiconductor device and method of manufacturing the same

ABSTRACT

It is provided a contacting method when a plurality of films to be peeled are laminating. Reduction of total layout area, miniaturization of a module, weight reduction, thinning, narrowing a frame of a display device, or the like can be realized by sequentially laminating a plurality of films to be peeled which are once separately formed over a plastic film or the like. Moreover, reliable contact having high degree of freedom is realized by forming each layer having a connection face of a conductive material and by patterning with the use of a photomask having the same pattern.

TECHNICAL FIELD

[0001] The present invention relates to a contacting method among aplurality of films to be peeled, specifically, a contacting method amongfilms to be peeled that include various elements. In addition, thepresent invention also relates to a semiconductor device having asemiconductor integrated circuit or a thin film transistor (hereinafter,referred to as a TFT) in which a film to be peeled is attached to asubstrate and is fixed thereto.

[0002] In this specification, the term “semiconductor device” refers todevices that can operate by utilizing semiconductor characteristics. Adisplay device, a semiconductor circuit, and an electronic device usingPDP, EL, or liquid crystal are all included in the semiconductor device.

BACKGROUND ART

[0003] As for a technique for forming a semiconductor integratedcircuit, a TFT, or the like over an insulating substrate by using asemiconductor thin film, an attempt to use a flexible substrate typifiedby a flexible plastic film or the like as the insulating substrate hasbeen made in recent years from the viewpoint of improving durability orreducing weight.

[0004] However, compared with glass, quartz, or the like which isgenerally used as an insulating substrate at present, a plastic film haslow heat resistance and has a limitation on processing temperature in astep of forming a TFT. Therefore, it is difficult to directly form a TFTover a plastic substrate and to obtain high properties.

[0005] Then, a technique for peeling a TFT that is once formed overglass, quartz, or the like off a substrate and fixing to a plastic filmor the like has recently been proposed (for example, Japanese PatentLaid-Open No. 8-288522).

[0006] In this specification, the terms “film to be peeled” refer to afilm including a semiconductor integrated circuit, a TFT, or the likewhich is once formed over glass, quartz, or the like. quartz, or thelike.

DISCLOSURE OF THE INVENTION PROBLEM TO BE SOLVED BY THE INVENTION

[0007] Reduction of total layout area, weight reduction, thinning, orthe like can be realized by using a technique for fixing a film to bepeeled to a plastic film or the like and by sequentially laminating aplurality of films to be peeled which are once separately formed.However, it is difficult to form a contact hole for connecting a film tobe peeled to another film to be peeled at the time of laminating.

[0008] The present invention has been made in view of the foregoingproblem, and has an object to provide a contacting method whenlaminating a plurality of films to be peeled.

MEANS TO SOLVE THE PROBLEM

[0009] In a semiconductor device in which a plurality of films to bepeeled are separately formed and laminated, a face on which twodifferent films to be peeled that are sequentially laminated are incontact with each other has at least the same pattern made of aconductive material. The two different films to be peeled are connected,thereby realizing reliable contact having high degree of freedom.

[0010] In a semiconductor device of the present invention, it ischaracterized by following. A film having an insulating layer, aconductive layer, and a semiconductor layer that is formed over a firstsubstrate is peeled off the first substrate, and then, is fixed to asecond substrate. A plurality of films to be peeled are laminated overthe second substrate. A face on which two of the different films to bepeeled that are sequentially laminated are in contact with each otherhas at least the same pattern made of a conductive material.

[0011] According to the present invention, the film to be peeled mayhave at least one of a thin film transistor, a capacitor means, aresistor means, a memory element, a thin film diode, and a photoelectricconversion element.

[0012] According to the present invention, a display portion including aplurality of pixels arranged in a matrix may be included in theplurality of films to be peeled.

[0013] According to the present invention, an EL element or liquidcrystal may be used for the display portion.

[0014] It is characterized in that a semiconductor device of the presentinvention comprises a first film and a second film which aresequentially laminated over a substrate, wherein the first film and thesecond film each have at least one insulating layer, one conductivelayer, and one semiconductor layer, and a face on which the first filmand the second film are in contact with each other is made of theconductive layer and at least has the same pattern.

[0015] According to the present invention, the first film and the secondfilm may have at least one of a thin film transistor, a capacitor means,a resistor means, a memory element, a thin film diode, and aphotoelectric conversion element.

[0016] According to the present invention, the first film and the secondfilm may have a display portion including a plurality of pixels arrangedin a matrix.

[0017] According to the present invention, an EL element or liquidcrystal may be used for the display portion.

[0018] It is characterized in that a method for manufacturing asemiconductor device of the present invention comprises the steps of:forming a film having an insulating layer, a conductive layer, and asemiconductor layer over a first substrate; peeling the film having aninsulating layer, a conductive layer, and a semiconductor layer off thefirst substrate; and laminating a plurality of the films having aninsulating layer, a conductive layer, and a semiconductor layer over asecond substrate, wherein a face on which the two different films havingan insulating layer, a conductive layer, and a semiconductor layer arein contact with each other at least has the same pattern made of aconductive material, and the two different films are connected bycontact of the same patterns with each other.

[0019] It is characterized in that a method for manufacturing asemiconductor device of the present invention comprises the steps of:forming a peel layer over a first substrate; forming a film having aninsulating layer, a conductive layer, and a semiconductor layer over thepeel layer; peeling the film having an insulating layer, a conductivelayer, and a semiconductor layer off the first substrate; and laminatinga plurality of the films having an insulating layer, a conductive layer,and a semiconductor layer over a second substrate, wherein a face onwhich the two different films having an insulating layer, a conductivelayer, and a semiconductor layer are in contact with each other at leasthas the same pattern made of a conductive material, and the twodifferent films are connected by contact of the same patterns with eachother.

[0020] According to the present invention, a step of removing the peellayer may be provided between the step of peeling the film having aninsulating layer, a conductive layer, and a semiconductor layer off thefirst substrate and the step of laminating a plurality of the filmshaving an insulating layer, a conductive layer, and a semiconductorlayer over the second substrate.

[0021] According to the present invention, the second substrate may havea flat surface or a curved surface.

[0022] It is characterized in that a method for manufacturing asemiconductor device of the present invention comprises the steps of:forming a first film in which a first insulating layer, a firstconductive layer, and a first semiconductor layer are formed over afirst substrate; forming a second film having a second insulating layer,a second conductive layer having at least the same pattern as the firstconductive layer, and a second semiconductor layer over a secondsubstrate; fixing the first film to a third substrate after peeling thefirst film off the first substrate; and laminating the second film overthe first film fixed to the third substrate after peeling the secondfilm off the second substrate, wherein the first film and the secondfilm are connected by contact of the same patterns with each other inthe step of laminating.

[0023] According to the present invention, the first conductive layerand the second conductive layer may each at least have the same patternon a face on which the first film and the second film are in contactwith each other.

[0024] According to the present invention, a peel layer may be formedbetween the first substrate and the first film.

[0025] According to the present invention, a step of removing the peellayer may be provided between the step of peeling the first film off thefirst substrate and the step of fixing the first film to the thirdsubstrate.

[0026] According to the present invention, a peel layer may be formedbetween the second substrate and the second film.

[0027] According to the present invention, a step of removing the peellayer may be provided between the step of peeling the second film offthe second substrate and the step of laminating the second film over thefirst film.

[0028] According to the present invention, the third substrate may havea flat surface or a curved surface.

[0029] It is characterized in that a method for manufacturing asemiconductor device of the present invention comprises the steps of:forming a first film in which a first insulating layer, a firstconductive layer, and a first semiconductor layer are formed over afirst substrate; forming a second film having a second insulating layer,a second conductive layer at least having the same pattern as the firstconductive layer, and a second semiconductor layer over a secondsubstrate; peeling the first film off the first substrate by fixing athird substrate to the first film; fixing the peeled first film to afourth substrate; peeling the second film off the second substrate byfixing the second film to a fifth substrate; and laminating the peeledsecond film over the first film fixed to the fourth substrate, whereinthe first film and the second film are connected by contact of the samepatterns with each other in the step of laminating.

[0030] According to the present invention, the first conductive layerand the second conductive layer may each at least have the same patternon a face on which the first film and the second film are in contactwith each other.

[0031] According to the present invention, a peel layer may be formedbetween the first substrate and the first film.

[0032] According to the present invention, a step of removing the peellayer may be provided between the step of peeling the first film off thefirst substrate and the step of fixing the first film to the fourthsubstrate.

[0033] According to the present invention, a peel layer may be formedbetween the second substrate and the second film.

[0034] According to the present invention, a step of removing the peellayer may be provided between the step of peeling the second film offthe second substrate and the step of laminating the second film over thefirst film.

[0035] According to the present invention, the fourth substrate may havea flat surface or a curved surface.

EFFECT OF THE INVENTION

[0036] Miniaturization of total layout area and a module, weightreduction, thinning, narrowing a frame of a display device, or the likecan be realized by sequentially laminating a plurality of films to bepeeled which are once separately formed over a plastic film or the like.Moreover, reliable contact having high degree of freedom is realized byforming each layer having a connection face of a conductive material andby patterning with the use of a photomask at least having the samepattern. In addition, the layer having a connection face can be used asa wiring layer.

BRIEF DESCRIPTION OF THE DRAWINGS

[0037]FIG. 1 is a figure which shows an embodiment mode of the presentinvention.

[0038]FIG. 2 is a figure which shows an embodiment mode of the presentinvention.

[0039]FIG. 3 is a figure which shows a structural example of a displaydevice to which the present invention is applied.

[0040]FIGS. 4A to 4D are figures which show examples of electronicdevices to which the present invention can be applied.

[0041]FIG. 5 is a comparative diagram of a conventional display deviceand a display device to which the present invention is applied.

[0042]FIGS. 6A to 6C are figures which show steps of an embodiment modeof the present invention.

[0043]FIGS. 7A to 7C are figures which show steps of an embodiment modeof the present invention.

[0044]FIGS. 8A and 8B are figures which show steps of an embodiment modeof the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION

[0045] This embodiment mode is described with reference to FIG. 1.

[0046] A film to be peeled A 1001 and a film to be peeled B 1002, eachof which is formed in advance over a substrate such as glass, are fixedto a substrate 1003 using a plastic film or the like to laminate thefilm to be peeled B 1002 and the film to be peeled A 1001 in this order.When the film to be peeled B 1002 is formed, a conductive film is formedas a top layer to be a contact face with the film to be peeled A 1001and is patterned by using a photomask B to form a connecting portion B1005.

[0047] Further, when the film to be peeled A 1001 is formed, aconductive film is formed as a bottom layer to be a contact face withthe film to be peeled B 1002 and is patterned by using a photomask A toform a connecting portion A 1004. The photomask A and the photomask B atleast have the same pattern, and are contacted at every same patternwhen laminated. The connecting portion A 1004 and the connecting portionB 1005 may have completely the same pattern, or may have the samepattern at least partially.

[0048] When the films to be peeled are fixed, a filmy or pastyanisotropic conductive adhesive is interposed between the film to bepeeled and the film to be peeled, thereby fixing the films to be peeledto each other. The anisotropic conductive adhesive is made of a mixtureof an insulating adhesive material and a conductive filling material andhas conductivity only in the direction of Z-axis.

[0049] Reference numeral 2001 in FIG. 2 shows an example of across-sectional view taken along a line x-x′ in FIG. 1, and referencenumeral 2002 in FIG. 2 shows an example of a cross-sectional view takenalong a line y-y′ in FIG. 1.

[0050] For example, a film including a pixel portion of an EL displaydevice is regarded as a film to be peeled A 2001, and a film including adriver circuit portion is regarded as a film to be peeled B 2002. Asubstrate 2003 is a substrate using a plastic film or the like. Aconnecting potion A 2004 is formed as a bottom layer of the film to bepeeled A 2001, and a TFT 2005 and a wiring are formed over theconnecting portion A 2004. A bank 2007 is formed on an edge of a pixelelectrode 2008 that is connected to either a source electrode or a drainelectrode of the TFT 2005. An EL layer 2009 is formed over an opening ofthe pixel electrode 2008, and furthermore, an opposite electrode 2010 isformed thereover.

[0051] A connecting potion B 2013 is formed as a top layer of the filmto be peeled B 2002, and a wiring 2012 and a TFT 2011 are formedtherebelow. The film to be peeled B 2002 and the film to be peeled A arefixed to the plastic substrate 2003 in this order and are laminated.Since the connecting portion A 2004 and the connecting portion B 2013are formed to have at least the same pattern, they are contacted atevery same pattern. A first wiring 2006 and a third wiring 2012 are madeconductive and a second wiring 2007 and a fourth wiring 2013 are madeconductive. The connecting portion A 2004 and the connecting portion B2013 may have completely the same pattern, or may have the same patternat least partially.

[0052] Moreover, the top layer and the bottom layer are a top layer anda bottom layer seen from a substrate side when laminated over thesubstrate 2003, and there is no need to be a top layer and a bottomlayer when forming a film to be peeled. A protective film, a peel layer,or the like may be formed as needed and may be removed in a fixing step.

[0053] More particularly, fixing and laminating steps are described withreference to FIGS. 6A to 8B.

[0054] First, in a first step shown in FIG. 6A, a first peel layer 6002,a second peel layer 6003, a film B 2002 including a driver circuitportion are formed over a first substrate 6001 using glass or the like.Subsequently, in a second step shown in FIG. 6B, a second substrate 6004using glass or the like is fixed with a first adhesive 6005 using awater-soluble adhesive or the like. The first substrate 6001 is peeledoff the film B 2002 including a driver circuit portion with the film B2002 including a driver circuit portion remained on a side of the secondsubstrate 6004. At this time, the first substrate 6001 and the film B2002 including a driver circuit portion are peeled off at a boundarysurface between the first peel layer 6002 and the second peel layer6003.

[0055] Next, in a third step shown in FIG. 6C, a second adhesive 6006using an epoxy adhesive or the like is applied onto the substrate 2003,and the film B 2002 including a driver circuit portion is fixed thereto.Subsequently, the first adhesive 6005 is removed by using water or thelike, thereby peeling the second substrate 6004 off the film to bepeeled B 2002.

[0056] In a fourth step shown in FIG. 7A, a third peel layer 7002, afourth peel layer 7003, a film A 2001 including a pixel portion areformed over a third substrate 7001 using glass or the like.Subsequently, in a fifth step shown in FIG. 7B, a fourth substrate 7004is fixed with a third adhesive 7005 using a water-soluble adhesive orthe like. Then, the third substrate 7001 is peeled off the film A 2001including a pixel portion with the film A 2001 including a pixel portionremained on a side of the fourth substrate 7004. At this time, the thirdsubstrate 7001 and the film A 2001 including a pixel portion are peeledoff at a boundary surface between the third peel layer 7002 and thefourth peel layer 7003.

[0057] Next, in a sixth step shown in FIG. 7C, the fourth peel layer7003 is removed by CMP (Chemical Mechanical Polishing). Subsequently, ina seventh step shown in FIG. 8A, an anisotropic conductive adhesive 8001is interposed between the film A 2001 including a pixel portion and thefilm to be peeled B 2002 to fix.

[0058] Thereafter, the third adhesive 7005 may be removed to peel thefourth substrate 7004 off the film A 2001 including a pixel portion, anda sealing substrate 8002 using a plastic film or the like may be fixedwith a fourth adhesive 8003.

[0059] Further, CMP is employed to remove the peel layer in the abovedescription; however, another mechanical technique or another scientifictechnique such as etching may also be employed.

[0060] As a method for fixing films to be peeled to each other, the caseof using an anisotropic conductive adhesive is described in thisembodiment mode; however, the films to be peeled may be fixed byapplying an adhesive to a top layer or a bottom layer of the film to bepeeled. In this case, thickness of the adhesive needs to be adjusted sothat connecting portions are connected with low resistance. In addition,the film to be peeled may be sealed by using an opposite substrate, andthe films to be peeled may be fixed to each other with the adhesive usedat the time or by applying pressure.

[0061] In this embodiment mode, the case of laminating two films to bepeeled is described. However, also in the case of laminating three ormore films, at least the same pattern made of a conductive material maybe formed on a contact face of two different films to be peeled whichare sequentially laminated and are in contact with each other, so as tobe in contact. The pattern made of a conductive material may becompletely the same, or may be at least partially the same.

[0062] In addition, the EL display device is described here as anexample; however, the present invention may be applied to other lightemitting devices or to a liquid crystal display device.

EMBODIMENT 1

[0063] A display device using a contacting method of this embodimentmode is described with reference to FIG. 3.

[0064] A film to be peeled C 3003 is a controller portion, whichincludes a power supply portion 3009 and a signal generating portion3010. A film to be peeled B 3002 is a driver circuit portion, whichincludes a first horizontal scanning line driver circuit 3005, a secondhorizontal scanning line driver circuit 3006, a first vertical scanningline driver circuit 3007, and a second vertical scanning line drivercircuit 3008. A film to be peeled A 3001 is a pixel portion, whichincludes a plurality of pixels 3004 arranged in a matrix.

[0065] At the power supply portion 3009 in the controller portion, eachpower supply of a desired voltage is generated from a power supplysupplied from a battery or an outlet, and is supplied to the drivercircuit portion, the signal generating portion 3010, and the like. Apower supply, a video signal, a synchronizing signal, and the like areapplied to the signal generating portion 3010, and various signals areconverted. In addition, a clock signal and the like are generated, andare supplied to the driver circuit portion.

[0066] At the first horizontal scanning line driver circuit 3005 and thesecond horizontal scanning line driver circuit 3006 in the drivercircuit portion, a pulse which sequentially selects a horizontalscanning line from the first row to the last row using the inputtedpower source, signal, and the like is generated, and is supplied to thepixel portion. At the first vertical scanning line driver circuit 3007and the second vertical scanning line driver circuit 3008, a videosignal is converted with the use of the inputted power source, signal,or the like, and is supplied to the pixel portion.

[0067] At the pixel portion, the video signal is inputted into eachpixel with the use of the inputted selecting pulse, video signal, or thelike, and an image is displayed.

[0068] The same pattern made of a conductive material is formed as abottom layer of the film to be peeled A 3001 and a top layer of the filmto be peeled B 3002. The same pattern made of a conductive material isat least formed as a bottom layer of the film to be peeled B 3002 and atop layer of the film to be peeled C 3003.

[0069] The film to be peeled C 3003, the film to be peeled B 3002, andthe film to be peeled A 3001 are sequentially transferred to a plasticsubstrate 3011. The film to be peeled A and the film to be peeled B, andthe film to be peeled B and the film to be peeled C can be in contactrespectively by connecting portions of the same patterns made of aconductive material.

[0070] Since area equivalent to the pixel portion can be used for thedriver circuit portion, a layout with high degree of freedom can beobtained.

EMBODIMENT 2

[0071]FIG. 5A shows an example of a conventional display device, andFIG. 5B shows an example of a display device using the presentinvention.

[0072] A general display device has a controller portion, a drivercircuit portion, a display portion, and the like. A conventional displaydevice shown in FIG. 5A has a driver circuit portion such as a verticalscanning line driver circuit 5002 and a horizontal scanning line drivercircuit 5003, a display portion 5004, and a controller portion 5001including an IC chip or the like, which are all formed over a glasssubstrate 5005.

[0073] A display device using the present invention shown in FIG. 5B,has a film to be peeled C 5104 including a controller portion, a film tobe peeled B 5103 including a driver circuit portion, and a film to bepeeled A 5102 including a display portion 5101 over a plastic substrate5105. Compared with the conventional display device, the display deviceusing the present invention is effective for miniaturizing the displaydevice as a whole and narrowing a frame since the driver circuitportion, the controller potion, and the display portion can be laminatedand disposed. In addition, the display device using the presentinvention is also effective for thinning, reducing weight, and improvingdurability, since a plastic substrate or the like is used.

[0074] In the case of applying the present invention to a transmissiveliquid crystal display device, a film to be peeled including a backlight portion using a light emitting element such as an EL element maybe disposed below a film to be peeled including a display portion.

[0075] A display device of the present invention can be used for adisplay portion of various electronic devices. Specifically, a displaydevice of the present invention is preferably used for a mobile devicethat is required to be thin and lightweight.

[0076] Such electric devices are specifically as follows: a personaldigital assistant (a cellular phone, a mobile computer, a mobile gamemachine, an electronic book, or the like), a video camera, a digitalcamera, a goggle type display, a display unit, a navigation system, andthe like. Specific examples of the electric devices are described withreference to FIGS. 4A to 4D.

[0077]FIG. 4A shows a display unit, which includes a chassis 4001, avoice output portion 4002, a display portion 4003, and the like. Adisplay device of the present invention can be used for the displayportion 4003. The display device includes all display devices fordisplaying information, including ones for personal computers, for TVbroadcasting reception, and for advertisement.

[0078]FIG. 4B shows a mobile computer, which includes a main body 4101,a stylus 4102, a display portion 4103, operation buttons 4104, anexternal interface 4105, and the like. A display device of the presentinvention can be used for the display portion 4103.

[0079]FIG. 4C shows a game machine, which includes a main body 4201, adisplay portion 4202, operation buttons 4203, and the like. A displaydevice of the present invention can be used for the display portion4202.

[0080]FIG. 4D shows a cellular phone, which includes a main body 4301, avoice output portion 4302, an audio input portion 4303, a displayportion 4304, operation switches 4305, an antenna 4306, and the like. Adisplay device of the present invention can be used for the displayportion 4304.

[0081] As described above, the applicable range of the present inventionis so wide that the present invention can be applied to electronicdevices of various fields. Particularly, it is capable of thinning,reducing weight, miniaturizing a module, and narrowing a frame;therefore, it may be used for such a display device as shown in FIGS. 4Ato 4D.

1. A semiconductor device characterized by comprising a first film and asecond film which are sequentially laminated over a substrate, whereinthe first film and the second film each has at least one layer of aninsulating layer, a conductive layer, and a semiconductor layer, and aface on which the first film and the second film are in contact witheach other is made of the conductive layer and at least has the samepattern.
 2. A semiconductor device according to claim 1 characterized inthat the first film and the second film have at least one of a thin filmtransistor, a capacitor means, a resistor means, a memory element, athin film diode, and a photoelectric conversion element.
 3. Asemiconductor device according to claim 1 characterized in that thefirst film and the second film have a display portion including aplurality of pixels arranged in a matrix.
 4. A semiconductor deviceaccording to claim 3 characterized in that an EL element or liquidcrystal is used for the display portion.
 5. A semiconductor deviceaccording to claim 1, the substrate may have a flat surface or a curvedsurface.
 6. A method for manufacturing a semiconductor devicecharacterized by comprising the steps of: forming a first film in whicha first insulating layer, a first conductive layer, and a firstsemiconductor layer are formed over a first substrate; forming a secondfilm having a second insulating layer, a second conductive layer havingat least the same pattern as the first conductive layer, and a secondsemiconductor layer over a second substrate; fixing the first film to athird substrate after peeling the first film off the first substrate;and laminating the second film over the first film fixed to the thirdsubstrate after peeling the second film off the second substrate,wherein the first film and the second film are connected by contact ofthe same patterns in the step of laminating.
 7. A method formanufacturing a semiconductor device according to claim 6 characterizedin that the first conductive layer and the second conductive layer eachhave at least the same pattern on a face on which the first film and thesecond film are in contact with each other.
 8. A method formanufacturing a semiconductor device according to claim 6 characterizedin that a peel layer is formed between the first substrate and the firstfilm.
 9. A method for manufacturing a semiconductor device according toclaim 6 characterized in that a step of removing the peel layer isprovided between the step of peeling the first film off the firstsubstrate and the step of fixing the first film to the third substrate.10. A method for manufacturing a semiconductor device according to claim6 characterized in that a peel layer is formed between the secondsubstrate and the second film.
 11. A method for manufacturing asemiconductor device according to claim 6 characterized in that a stepof removing the peel layer is provided between the step of peeling thesecond film off the second substrate and the step of laminating thesecond film over the first film.
 12. A method for manufacturing asemiconductor device according to claim 6 characterized in that thethird substrate has a flat surface or a curved surface.
 13. A method formanufacturing a semiconductor device characterized by comprising thesteps of: forming a first film in which a first insulating layer, afirst conductive layer, and a first semiconductor layer are formed overa first substrate; forming a second film having a second insulatinglayer, a second conductive layer having at least the same pattern as thefirst conductive layer, and a second semiconductor layer over a secondsubstrate; peeling the first film off the first substrate by fixing athird substrate to the first film; fixing the peeled first film to afourth substrate; peeling the second film off the second substrate byfixing the second film to a fifth substrate; and laminating the peeledsecond film over the first film fixed to the fourth substrate, whereinthe first film and the second film are connected by contact of the samepatterns with each other in the step of laminating.
 14. A method formanufacturing a semiconductor device according to claim 13 characterizedin that the first conductive layer and the second conductive layer mayeach at least have the same pattern on a face on which the first filmand the second film are in contact with each other.
 15. A method formanufacturing a semiconductor device according to claim 13 characterizedin that a peel layer is formed between the first substrate and the firstfilm.
 16. A method for manufacturing a semiconductor device according toclaim 15 characterized in that a step of removing the peel layer isprovided between the step of peeling the first film off the firstsubstrate and the step of fixing the first film to the fourth substrate.17. A method for manufacturing a semiconductor device according to claim13 characterized in that a peel layer is formed between the secondsubstrate and the second film.
 18. A method for manufacturing asemiconductor device according to claim 17 characterized in that a stepof removing the peel layer is provided between the step of peeling thesecond film off the second substrate and the step of laminating thesecond film over the first film.
 19. A method for manufacturing asemiconductor device according to claim 13 characterized in that thefourth substrate has a flat surface or a curved surface.